Filippos Papadatos, Ph.D.

Dr. Papadatos is a Science Advisor and Patent Agent in the firm's Business Law Department and a member of its Intellectual Property practice. He joined Goodwin in 2020.

Dr. Papadatos specializes in domestic and international intellectual property portfolio strategy, patent applications preparation and prosecution, patent validity and infringement opinion drafting, patentability and freedom to operate analyses. Dr. Papadatos’ experience extends to a variety of technological fields, including, but not limited to, semiconductor and microelectronics manufacturing processes, material science and thin-film processing, mechanical engineering, computer software, data processing, artificial intelligence, machine learning, data analytics, and energy.

• Drafting and prosecuting patent applications directed to semiconductor materials, material science, sensor technology, mobile advertising, data encryption, machine learning and artificial intelligence, data processing, robotics, telecommunications, and other technical fields.
• Performing freedom-to-operate, patentability, validity and infringement analyses.

Prior to joining Goodwin, Dr. Papadatos was a Technical Specialist and Patent Agent with Sterne Kessler Goldstein and Fox LLP in Washington, DC. Prior to becoming a Patent Agent, Dr. Papadatos spent 10 years in the semiconductor industry as a development engineer at IBM, and subsequently, as an integration engineer and manager at Samsung Austin Semiconductor. Dr. Papadatos is a co-inventor of several U.S. Patents and has authored/co-authored numerous scientific articles.

• Filippos Papadatos, Keith Wong, Valli Arunachalam, Chung Hwan Shin, Zhengwen Li, Michael Chudzik, Woo-Hyeong Lee, Aimin Xing: Low resistivity tungsten for 32 nm node MOL contacts and beyond, in Microelectronic Engineering 92 (2012) 123-125.
• Doug H. Lee, Valli Arunachalam, Filippos Papadatos, Hao Zhang, Zhengwen Li, Keith Wong, Woo-Hyeong Lee, Shurong Liang, Michael Chudzik, David Brown, Dan Mocuta, Doug Bonser, John Pellerin: Advanced Metallization Developments for 32-nm node CMOS Technology Contact Architecture, Materials Research Society, in Advanced Metallization Conference (AMC), Volume V-25, 2009.
• Valli Arunachalam, Filippos Papadatos, Hao Zhang, Keith Wong, Zhengwen Li, Chung Hwan Shin: ALD TiN for Contact Metallization: Correlation between Material and Barrier properties, American Vacuum Society (AVS), in: 9th International Conference on Atomic Layer Deposition, 2009.
• Keith Wong, Filippos Papadatos, Zhengwen Li,Hao Zhang,Valli Arunachalam, Doug Lee,Stephan Grunow: Extendibility of W Technology for 32nm CA Contact Schemes with Innovative Process Improvements, Materials Research Society, in Advanced Metallization Conference (AMC), Volume V-24, 2008.
• Filippos Papadatos, Steven Consiglio, Spyridon Skordas, Eric T. Eisenbraun, Alain E. Kaloyeros: A study of Ru ultra-thin film nucleation on pretreated SiO₂ and Hf–silicate dielectric surfaces, Materials Research Society, in Journal of Materials Research, Vol. 22, No. 8, 2007.
• S. Consiglio, F. Papadatos, S. Naczas, S. Skordas, E. T. Eisenbraun, and A. E. Kaloyeros: MOCVD of hafnium silicate thin films using a dual source dimethyl-alkylamido approach, The Electrochemical Society, in Journal of The Electrochemical Society, 153, 2006.
• S. Skordas, F. Papadatos, S. Consiglio, E. T. Eisenbraun, E. Gousev, and A. E. Kaloyeros: Electrical properties of ultra-thin Al₂O₃ films grown by MOCVD for adv. CMOS gate dielectric applications, Materials Research Society, in Journal of Materials Research, Vol. 20, No .6, 2005.
• F. Papadatos, S. Consiglio, S. Skordas, E. Eisenbraun, A. Kaloyeros, J. Peck, D. Thompson, C. Hoover: CVD of ruthenium and ruthenium oxide thin films for advanced CMOS gate electrode applications, Materials Research Society, in Journal of Materials Research, Vol. 19, No. 10, 2004.
• C. Hoover, M. Litwin, J. Peck, G. Piotrowski, D. Thompson, E. Eisenbraun, F. Papadatos: Advanced ruthenium precursors for thin film deposition, Electrochemical Society (ECS), in Electrochemical Society (ECS), Vol. 22, 2003.
• Filippos Papadatos, Steve Consiglio, Alain E. Kaloyeros, Eric T. Eisenbraun: Integration studies of MOCVD-grown Ru & RuO₂ with HfO₂-based dielectrics for adv. CMOS applications, SRC, in Proceedings of SRC TECHCON conference, 2003.
• S. Skordas, F. Papadatos, G. Nuesca, J. J. Sullivan, E. T. Eisenbraun, A. E. Kaloyeros: Low Temperature MOCVD of Al₂O₃ for advanced CMOS gate dielectric applications, Materials Research Society, in Journal of Materials Research, Vol. 18, No. 8, 2003.
• Spyridon Skordas, Filippos Papadatos, Steven Consiglio, Eric T. Eisenbraun, Alain E. Kaloyeros: Interface quality and performance of low-temp. MOCVD Al₂O₃ thin films for adv. CMOS gate dielectric appl., Materials Research Society, in Mat. Res. Soc. Proc, Vol. 745, 2003.
• Filippos Papadatos, Spyridon Skordas, Steve Consiglio, Alain E. Kaloyeros, and Eric Eisenbraun: Characterization of Ru and RuO₂ Thin Films deposited by CVD for CMOS Gate Electrode Applications, Materials Research Society, in Mat. Res. Soc. Proc, Vol. 745, 2003.
• F. Papadatos, S. Skordas, Z. Patel, S. Consiglio, and E. Eisenbraun: Chemical Vapor Deposition of Ru and RuO₂ for Gate Electrode applications, Materials Research Society, in Mat. Res. Soc. Proc, Vol. 716, 2002.
• S. Skordas, F. Papadatos, Z. Patel, G. Nuesca, E. Eisenbraun, E. Gusev, and A. E. Kaloyeros: Low temp. MOCVD of Al₂O₃ thin films for advanced CMOS gate dielectric applications, Materials Research Society, in Mat. Res. Soc. Proc, Vol. 716, 2002.
• J. Peck,C. Hoover,J. Atwood,D. Hoth,S. Consiglio, F. Papadatos, E. Eisenbraun, A. Kaloyeros: Chemical Vapor Deposition of novel precursors for advanced Capacitor electrodes, ECS, in Electrochemical Society (ECS) Proceedings, 2002.

Patents

• US9735268, US9559202, US9425309, US9006801 — Method for forming metal semiconductor alloys in contact holes and trenches.
• US9252050, US9230857 — Method to improve semiconductor surfaces and polishing.
• US8614107, US8614106 — Liner-free tungsten contact.
• US8552502, US8232148, WO2011109203A3 — Structure and method to make replacement metal gate and contact metal.
• US7993987 — Surface cleaning using sacrificial getter layer.
• WO2015055080A1 — Surface treatment in a dep-etch-dep process.